GaN power
Gallium nitride or GaN is a wide bandgap semiconductor in the III-V groups with properties that make it especially well suited to high-performance switching applications including high-frequency switches and optoelectronics.
INEX develops and manufactures high voltage GaN power devices. We are able to support high voltage vertical and lateral GaN high electron mobility transistor (HEMT), and diode development on a range of substrates.
GaN HEMT’s have high power density and can tolerate high operating temperatures. As new higher voltage capable GaN HEMT’s are developed GaN HEMT’s will help to improve performance and efficiency of DCDC converters, power inverters, electric vehicle chargers and other critical power conversion devices. Growing the application of GaN power devices into new applications.